2007-04-20 bfp740f 1 1 2 4 3 npn silicon germanium rf transistor ? high gain ultra low noise rf transistor ? provides outstanding performance for a wide range of wireless applications up to 10 ghz and more ? ideal for cdma and wlan applications ? outstanding noise figure f = 0.5 db at 1.8 ghz outstanding noise figure f = 0.75 db at 6 ghz ? high maximum stable gain g ms = 27.5 db at 1.8 ghz ? gold metallization for extra high reliability ? 150 ghz f t -silicon germanium technology ? pb-free (rohs compliant) package 1) ? qualified according aec q101 1 3 4 2 direction of unreeling top view xys esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package bfp740f r7s 1=b 2=e 3=c 4=e - - tsfp-4 1 pb-containing package may be available upon special request
2007-04-20 bfp740f 2 maximum ratings parameter symbol value unit collector-emitter voltage t a > 0c t a 0c v ceo 4 3.5 v collector-emitter voltage v ces 13 collector-base voltage v cbo 13 emitter-base voltage v ebo 1.2 collector current i c 30 ma base current i b 3 total power dissipation 1) t s 90c p tot 160 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 370 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4 4.7 - v collector-emitter cutoff current v ce = 13 v, v be = 0 i ces - - 30 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 3 a dc current gain i c = 25 ma, v ce = 3 v, pulse measured h fe 160 250 400 - 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note thermal resistance
2007-04-20 bfp740f 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 25 ma, v ce = 3 v, f = 1 ghz f t - 42 - ghz collector-base capacitance v cb = 3 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.08 0.14 pf collector emitter capacitance v ce = 3 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.2 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.44 - noise figure i c = 8 ma, v ce = 3 v, f = 1.8 ghz, z s = z sopt i c = 8 ma, v ce = 3 v, f = 6 ghz, z s = z sopt f - - 0.5 0.75 - - db power gain, maximum stable 1) i c = 25 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 27.5 - db power gain, maximum available 1) i c = 25 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 6 ghz g ma - 19 - db transducer gain i c = 25 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz f = 6 ghz | s 21e | 2 - - 25 15 - - db third order intercept point at output 2) v ce = 3 v, i c = 25 ma, z s = z l =50 ? , f = 1 . 8 ghz ip 3 - 25 - dbm 1db compression point at output i c = 25 ma, v ce = 3 v, z s = z l =50 ? , f = 1 . 8 ghz p -1db - 11 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ), g ms = | s 21e / s 12e | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2007-04-20 bfp740f 4 spice parameter (gummel-poon model, berkley-spice 2g.6 syntax): transistor chip data: is = 384.4 aa vaf = 400 v ne = 1.586 - var = 1.28 v nc = 1.5 - rbm = 1.69 ? cje = 220 ff tf = 2.1 ps itf = 290 ma vjc = 550 mv tr = 13 ps mjs = 180 m xti = 910 m af = 1 - bf = 1.1 k ikf = 512.1 ma br = 62 - ikr = 5 ma rb = 3.23 ? re = 90 m ? vje = 590 mv xtf = 3 - ptf = 100 mdeg mjc = 152 m cjs = 79.7 ff xtb = -2.2 - fc = 950 m kf = 0 - nf = 1.018 - ise = 4.296 fa nr = 1- isc = 3.85 fa irb = 10 a rc = 6.88 ? mje = 70 m vtf = 1.32 v cjc = 99.5 ff xcjc = 10 m vjs = 570 mv eg = 1.11 ev tnom 298 k all parameters are ready to use, no scalling is necessary. package equivalent circuit: lbc = 0.1 nh lcc = 0.2 nh lec = 20 ph lbb = 0.411 nh lcb = 0.696 nh leb = 21 ph cbec = 0.1 pf cbcc = 1 ff ces = 0.34 pf cbs = 39 ff ccs = 75 ff cceo = 0.177 pf cbeo = 92 ff ccei = 0.217 pf cbei = 52 ff rec =2 ? rbs = 3.5 k ? rcs = 1.65 k ? res = 90 ? b c e cceo cbeo ccei cbei cbec cbcc s c b e lbc lcc lec cbs rcs res lbb lcb leb rbs ccs ces rec bfp740f_chip valid up to 6ghz for examples and ready to use parameters please contact your local infineon technologies distributor or sales office to obtain a infineon technologies cd-rom or see internet: http://www.infineon.com
2007-04-20 bfp740f 5 total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 20 40 60 80 100 120 140 mw 180 p tot permissible pulse load r thjs = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 1 10 2 10 3 10 k/w r thjs d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 collector-base capacitance c cb = ? ( v cb ) f = 1 mhz 0 2 4 6 8 10 12 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 v cb [v] c cb [pf]
2007-04-20 bfp740f 6 third order intercept point ip 3 = ? ( i c ) (output, z s = z l = 50 ? ) v ce = parameter, f = 900 mhz 0 5 10 15 20 25 30 35 0 3 6 9 12 15 18 21 24 27 30 i c [ma] ip 3 [dbm] 1.00v 2.00v 3.00v 4.00v transition frequency f t = ? ( i c ) v ce = parameter in v, f = 2 ghz 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40 45 50 i c [ma] f t [ghz] 2v to 4v 1.00v 0.75v 0.50v power gain g ma , g ms = ? ( f ) v ce = 3 v, i c = 25 ma 0 1 2 3 4 5 6 5 10 15 20 25 30 35 40 45 50 55 f [ghz] [ghz] g [db] g ms g ma |s 21 | 2 power gain g ma , g ms = ? ( i c ) v ce = 3 v f = parameter in ghz 0 5 10 15 20 25 30 35 10 12 14 16 18 20 22 24 26 28 30 32 34 i c [ma] g [db] 6.00ghz 5.00ghz 4.00ghz 3.00ghz 2.40ghz 1.80ghz 0.90ghz
2007-04-20 bfp740f 7 power gain g ma , g ms = ? ( v ce ) i c = 25 ma f = parameter in ghz 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 4 8 12 16 20 24 28 32 36 v ce [v] g [db] 6.00ghz 5.00ghz 4.00ghz 3.00ghz 2.40ghz 1.80ghz 0.90ghz noise figure f = ? ( i c ) v ce = 3 v, f = parameter in ghz z s = z sopt 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 f [db] i c [ma] f = 0.9ghz f = 3ghz f = 2.4ghz f = 6ghz f = 5ghz f = 1.8ghz noise figure f = ? ( i c ) v ce = 3 v, f = 1.8 ghz 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 i c [ma] f [db] z s = 50 ? z s = z sopt noise figure f = ? ( f ) v ce = 3 v, z s = z sopt 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1 1.2 1.4 f [db] f [ghz] i c = 25ma i c = 8ma
2007-04-20 bfp740f 8 source impedance for min. noise figure vs. frequency v ce = 3 v, i c = 8 ma / 25 ma 1 0.2 0.4 2 4 0 1 ?1 ?5 10 1.5 ?10 ?1.5 0.5 ?0.5 0.1 2 ?0.1 ?2 0.2 ?0.2 0.3 3 ?0.3 ?3 0.4 ?0.4 4 ?4 5 3ghz i c = 8ma 1.8ghz 6ghz 5ghz 0.9ghz i c = 25ma 4ghz 2.4ghz
2007-04-20 bfp740f 9 package tsfp-4 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel bfp420f type code pin 1 0.35 0.45 0.9 0.5 0.5 4 0.2 1.55 0.7 1.4 8 pin 1 0.05 0.2 0.05 1.4 12 10? max. 0.05 0.8 1.2 0.05 0.04 0.55 0.05 0.2 0.05 0.15 0.05 0.2 0.5 0.05 0.5 0.05 43 manufacturer
2007-04-20 bfp740f 10 edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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